IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Density Current-Transformer Based Gate-Drive Power Supply with Reinforced Isolation for 10 kV SiC MOSFET Modules

Author(s): Jiewen Hu ; Jun Wang ; Rolando Burgos ; Bo Wen ; Dushan Boroyevich
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2019.2943742
Regular:

With features such as faster switching frequency and higher breakdown voltage, wide-bandgap power devices are key enablers to address the increasing demand for higher power density and higher... View More

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