IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analytical Models of Breakdown Voltage and Specific on-Resistance for Vertical GaN Unipolar Devices

Author(s): Haimeng Huang ; Jun Huang ; Huan Hu ; Junji Cheng ; Bo Yi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2019.2944028
Regular:

In this paper, the analytical models of breakdown voltage design parameters and minimum specific on-resistance in vertical gallium nitride unipolar devices are proposed. Considering the... View More

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