IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate Reliability of p-GaN HEMT With Gate Metal Retraction

Author(s): A. N. Tallarico ; S. Stoffels ; N. Posthuma ; B. Bakeroot ; S. Decoutere ; E. Sangiorgi ; C. Fiegna
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2938598
Regular:

In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky... View More

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