IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

Author(s): Sola Woo ; Jinsun Cho ; Doohyeok Lim ; Kyoungah Cho ; Sangsig Kim
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2939393
Regular:

In this article, we present a transposable three-transistor static random access memory (3T-SRAM) array consisting of independent double-gate feedback field-effect transistors as binary synaptic... View More

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