IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Importance of p-Doping for Quantum Dot Laser on Silicon Performance

Author(s): Justin C. Norman ; Zeyu Zhang ; Daehwan Jung ; Chen Shang ; MJ Kennedy ; Mario Dumont ; Robert W. Herrick ; Arthur C. Gossard ; John E. Bowers
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-1713
ISSN (Paper): 0018-9197
DOI: 10.1109/JQE.2019.2941579
Regular:

p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing... View More

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