IEEE - Institute of Electrical and Electronics Engineers, Inc. - More than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs with > 230 MW/cm2 Power Figure-of-Merit

Author(s): Yinhe Wu ; Jincheng Zhang ; Shenglei Zhao ; Weihang Zhang ; Yachao Zhang ; Xiaoling Duan ; Jiabo Chen ; Yue Hao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2941530
Regular:

In this letter, more than 3000 V reverse blocking Schottky-drain AlGaN-channel HEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage VFB (at 10... View More

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