IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Speed and Wider Swing, Level Shifter using Low-Temperature Poly-Silicon Oxide TFTs

Author(s): Abidur Rahaman ; Duk Young Jeong ; Jin Jang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2941548
Regular:

We report the CMOS level shifter (LS) made of p-type low-temperature poly-Si (LTPS) TFT using blue laser annealing (BLA) of amorphous Si (a-Si) and an n-type amorphous indium-gallium-zinc oxide... View More

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