IEEE - Institute of Electrical and Electronics Engineers, Inc. - Demonstration of 1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics

Author(s): Kai Fu ; Houqiang Fu ; Xuanqi Huang ; Hong Chen ; Tsung-Han Yang ; Jossue Montes ; Chen Yang ; Jingan Zhou ; Yuji Zhao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2941830
Regular:

This letter reports high performance GaN p-n junctions with regrown p-GaN by metalorganic chemical vapor deposition (MOCVD) on dry-etched surfaces. The breakdown voltage reaches 1.27 kV and the... View More

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