IEEE - Institute of Electrical and Electronics Engineers, Inc. - Passivation Characteristics of New Silicon Oxide

Author(s): Lei Gong ; Chunlan Zhou ; Junjie Zhu ; Wenjing Wang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2019.2929445
Regular:

Surface passivation on silicon is one of the hot topics for research in the field of silicon solar cells. Single layers of silicon oxide prepared by thermal oxidation, O$_{3}$ oxidation or... View More

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