IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Temperature Characterization of a 1.2kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Author(s): Jiahui Sun ; Shu Yang ; Hongyi Xu ; Long Zhang ; Xinke Wu ; Kuang Sheng ; Kevin J. Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2019.2941518
Regular:

Threshold voltage and channel mobility of a 1.2 kV planar-channel SiC MOSFET at high junction temperature (Tj) up to 700 ¼C have been extracted and analyzed for the first time, by virtue of a... View More

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