IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of Ballistic Monolayer Black Phosphorus MOSFETs

Author(s): Raphael J. Prentki ; Fei Liu ; Hong Guo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2924170
Regular:

In this paper, we present two accurate physics-based models of ballistic metal-oxide-semiconductor field-effect transistors (MOSFETs), both using less than ten parameters. These models--the... View More

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