IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs

Author(s): Yun-Hsuan Lin ; Ying-Hsin Lu ; Ting-Chang Chang ; Jih-Chien Liao ; Chein-Yu Lin ; Fu-Yuan Jin ; Yu-Shan Lin ; Fong-Min Ciou ; Yen-Cheng Chang ; Kai-Chun Chang ; Wei-Chun Hung ; Kuan-Hsu Chen ; Chien-Hung Yeh ; Ting-Tzu Kuo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 4
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2925104
Regular:

This work investigates the effects of HfO₂ layer defects, formed by the Al atoms in the metal gate, on performance and reliability in advanced n-type metal-oxide-semiconductor... View More

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