IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs

Author(s): Ramendra Singh ; Kritika Aditya ; Anabela Veloso ; Bertrand Parvais ; Abhisek Dixit
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2924439
Regular:

In this paper, we report the characterization and modeling of multi-finger gate all around (GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in NWFETs is... View More

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