IEEE - Institute of Electrical and Electronics Engineers, Inc. - A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches

Author(s): Elham Cheshmikhani ; Hamed Farbeh ; Hossein Asadi
Sponsor(s): IEEE Reliability Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 17
ISSN (Electronic): 1558-1721
ISSN (Paper): 0018-9529
DOI: 10.1109/TR.2019.2923258
Regular:

Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising replacement for static random access memory (SRAM) technology in large last-level cache memories (LLC). Despite its high... View More

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