IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-Convergent Trimming SRAM True Random Number Generation With In-Cell Storage

Author(s): Po-Shao Yeh ; Chih-An Yang ; Yi-Hong Chang ; Yue-Der Chih ; Chrong-Jung Lin ; Ya-Chin King
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Electronic): 1558-173X
ISSN (Paper): 0018-9200
DOI: 10.1109/JSSC.2019.2924094
Regular:

In this paper, a novel 4T-2R self-aligned nitride (SAN) cell-integrated static random-access memory (SRAM) cell is first implemented for true random number generator (TRNG) applications. The SRAM... View More

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