IEEE - Institute of Electrical and Electronics Engineers, Inc. - Asymmetric Bipolar Injection in a Schottky-Metal/p-GaN/AlGaN/GaN Device under Forward Bias

Author(s): Baikui Li ; Hui Li ; Jiannong Wang ; Xi Tang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2926503
Regular:

In this work, we investigated the electroluminescence (EL) spectra and photovoltage spectrum of a Schottky-metal/p-GaN/AlGaN/GaN diode with a semitransparent anode electrode. By analyzing... View More

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