IEEE - Institute of Electrical and Electronics Engineers, Inc. - H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs

Author(s): Tae In Lee ; Manh-Cuong Nguyen ; Hyun Jun Ahn ; Min Ju Kim ; Eui Joong Shin ; Wan Sik Hwang ; Hyun-Young Yu ; Rino Choi ; Byung Jin Cho
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2928026
Regular:

We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. Compared to conventional forming gas annealing (FGA), the H2-HPA in this study... View More

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