IEEE - Institute of Electrical and Electronics Engineers, Inc. - Normally-off HEMTs with Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by using an AlN pre-layer

Author(s): Yaozong Zhong ; Shuai Su ; Xin Chen ; Yu Zhou ; Junlei He ; Hongwei Gao ; Xiaoning Zhan ; Xiaolu Guo ; Jianxun Liu ; Qian Sun ; Hui Yang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2928027
Regular:

Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiNx passivation by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a high-temperature... View More

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