IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation

Author(s): Chia-Hung Lin ; Yohei Yuda ; Man Hoi Wong ; Mayuko Sato ; Nao Takekawa ; Keita Konishi ; Tatsuro Watahiki ; Mikio Yamamuka ; Hisashi Murakami ; Yoshinao Kumagai ; Masataka Higashiwaki
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2927790
Regular:

A guard ring (GR) was employed to improve the breakdown voltage (Vbr) of vertical Ga2O3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field... View More

Advertisement