IEEE - Institute of Electrical and Electronics Engineers, Inc. - Closed-Form Analysis of Metastability Voltage in 28 nm UTBB FD-SOI CMOS Technology

Author(s): Fabian Olivera ; Antonio Petraglia
Sponsor(s): IEEE Circuits and Systems Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-3791
ISSN (Paper): 1549-7747
DOI: 10.1109/TCSII.2019.2924807
Regular:

In this paper, analytical expressions for the metastability voltage of latch-type comparators at sub-threshold operation are advanced. Drain induced barrier lowering (DIBL) and body bias effects... View More

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