IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/ n- Silicon Heterojunction

Author(s): Wei Wang ; Hao Lin ; Zhenhai Yang ; Zilei Wang ; Jiajia Wang ; Longfei Zhang ; Mingdun Liao ; Yuheng Zeng ; Pingqi Gao ; Baojie Yan ; Jichun Ye
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2019
Volume: 9
Page(s): 1,113 - 1,120
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2019.2917386
Regular:

Specific contact resistance $(\rho _{c})$, commonly extracted by Cox and Strack method (CSM) and transfer length method (TLM), is one of the most important properties of carrier-selective... View More

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