IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Thermal Annealing on Absorption and Hole Escape Processes in Type II GaSb/GaAs Quantum Dots: Implications for Solar Cell Design

Author(s): Hela Boustanji ; Sihem Jaziri ; Stanko Tomic
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2019
Volume: 9
Page(s): 1,144 - 1,153
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2019.2905762
Regular:

We present a theoretical study of the rapid thermal annealing process and strain on the electronic, optical, and charge dynamical properties of type II GaSb/GaAs quantum dots (QDs). Our... View More

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