IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs

Author(s): Narendra Parihar ; Anandkrishnan R ; Ankush Chaudhary ; Souvik Mahapatra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2920666
Regular:

The time kinetics of threshold voltage shift (Δ VT) is measured for negative-bias temperature instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra-fast... View More

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