IEEE - Institute of Electrical and Electronics Engineers, Inc. - Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Author(s): T. Ali ; P. Polakowski ; T. Buttner ; T. Kampfe ; M. Rudolph ; B. Patzold ; R. Hoffmann ; M. Czernohorsky ; K. Kuhnel ; P. Steinke ; K. Zimmermann ; K. Biedermann ; L. M. Eng ; K. Seidel ; J. Muller
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 9
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2921618
Regular:

We report for the first time the integration of silicon-doped hafnium oxide (HSO) antiferroelectric (AFE) material for enhanced floating-gate Flash memory speed by means of field-enhanced AFE... View More

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