IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Accurate Characterization of Capture Time Constants in GaN HEMTs

Author(s): Joao L. Gomes ; Luis C. Nunes ; Cristiano F. Goncalves ; Jose C. Pedro
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 10
ISSN (Electronic): 1557-9670
ISSN (Paper): 0018-9480
DOI: 10.1109/TMTT.2019.2921338
Regular:

This paper provides theoretical and experimental evidence that, contrary to what is a widely reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs)... View More

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