IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 30 GHz Low Power & High Gain Low Noise Amplifier with G m -Boosting in 28nm FD-SOI CMOS Technology

2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST)

Author(s): Georgios Konidas ; Panagiotis Gkoutis ; Vasilis Kolios ; Grigorios Kalivas
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2019
Conference Location: Thessaloniki, Greece, Greece
Conference Date: 13 May 2019
Page(s): 1 - 4
ISBN (Electronic): 978-1-7281-1184-1
DOI: 10.1109/MOCAST.2019.8741860
Regular:

This paper presents a 30 GHz Low Noise Amplifier (LNA) in 28nm FD-SOI CMOS technology for 5G applications. The LNA consists of two stages. The first stage is a cascode topology with gm-boosting... View More

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