IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single-Event Upsets in SRAMs With Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Author(s): Wei Chen ; Xiaoqiang Guo ; Chenhui Wang ; Fengqi Zhang ; Chao Qi ; Xun Wang ; Xiaoming Jin ; Yuan Wei ; Shanchao Yang ; Zhaohui Song
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2019
Volume: 66
Page(s): 856 - 865
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2019.2912021
Regular:

Terrestrial, nuclear reactor, and monoenergetic neutron-induced single-event upset (SEU) in SRAMs with different technology nodes more than $1.50~\mu \text{m}$ -40 nm were explored experimentally.... View More

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