IEEE - Institute of Electrical and Electronics Engineers, Inc. - Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Author(s): Wadia Jouha ; Ahmed El Oualkadi ; Pascal Dherbecourt ; Eric Joubert ; Mohamed Masmoudi
Sponsor(s): IEEE Power Electronics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 33
Page(s): 9,130 - 9,133
ISSN (Electronic): 1941-0107
ISSN (Paper): 0885-8993
DOI: 10.1109/TPEL.2018.2822939
Regular:

This letter proposes an accurate parameter extraction method based on the Levenberg-Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method... View More

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