IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Author(s): Jiyong Woo ; Shimeng Yu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2019
Conference Location: Singapore, Singapore, Singapore
Conference Date: 12 March 2019
Page(s): 148 - 150
ISBN (Electronic): 978-1-5386-6508-4
DOI: 10.1109/EDTM.2019.8731137
Regular:

We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE... View More

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