IEEE - Institute of Electrical and Electronics Engineers, Inc. - Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Author(s): Viktor Sverdlov ; Siegfried Selberherr
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2019
Conference Location: Singapore, Singapore, Singapore
Conference Date: 12 March 2019
Page(s): 151 - 153
ISBN (Electronic): 978-1-5386-6508-4
DOI: 10.1109/EDTM.2019.8731330
Regular:

The spin orbit torque magnetic random access memory (SOT-MRAM) combines non-volatility, high speed, and high endurance and is suited for applications in caches. However, its development is still... View More

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