IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias

2019 IEEE International Reliability Physics Symposium (IRPS)

Author(s): L. Pirro ; A. Zaka ; O. Zimmerhackl ; T. Herrmann ; M. Otto ; El M. Bazizi ; J. Hoentschel ; X. Li ; R. Taylor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2019
Conference Location: Monterey, CA, USA, USA
Conference Date: 31 March 2019
Page(s): 1 - 5
ISBN (Electronic): 978-1-5386-9504-3
ISSN (Electronic): 1938-1891
DOI: 10.1109/IRPS.2019.8720419
Regular:

The impact of device geometry, process integration and back bias on Low-Frequency Noise (LFN) performance of 22FDX® thin oxide devices has been investigated. Calibrated TCAD simulations were used... View More

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