IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bias dependence of the energy resolution of semiconductor hemispherical detectors

2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)

Author(s): Victor V. Samedov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2016
Conference Location: Strasbourg, France
Conference Date: 29 October 2016
Page(s): 1 - 5
ISBN (Electronic): 978-1-5090-1642-6
DOI: 10.1109/NSSMIC.2016.8069951
Regular:

Now hemispherical geometry is used for designing insensitive to the hole transport single polarity CdZnTe detectors. In this work, theoretical consideration of the processes in semiconductor... View More

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