IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of Nanowire Field Effect Transistors SET response: Geometrical Considerations

Author(s): Marc Gaillardin ; Melanie Raine ; Martial Martinez ; Olivier Duhamel ; Jonathan Riffaud ; Thierry Lagutere ; Claude Marcandella ; Philippe Paillet ; Nicolas Richard ; Maud Vinet ; Frangois Andrieu ; Sylvain Barraud
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2019.2916316
Regular:

The Single-Event Transient (SET) response of Silicon-On-Insulator (SOI) tri-gate silicon nanowires is investigated using direct measurements of current transients. The impact of nanowire... View More

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