IEEE - Institute of Electrical and Electronics Engineers, Inc. - Passivation of Thin Channel Zinc Tin Oxide TFTs using Al2O3 Deposited by O3-based Atomic Layer Deposition

Author(s): Christopher R. Allemang ; Rebecca L. Peterson
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2914238
Regular:

Here, we fabricate solution processed zinc tin oxide bottom gate top contact thin film transistors (TFTs) with active layer thickness down to 6 nm by varying the solution molarity and number of... View More

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