IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design Methodology of DC Power Cycling Test Setup for SiC MOSFETs

Author(s): Fei Yang ; Enes Ugur ; Bilal Akin ; Gangyao Wang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2019.2914419
Regular:

The long-term reliability concerns regarding the latest power devices, e.g. SiC MOSFETs, need to be well-understood for their rapid and widespread deployment in industrial applications. As an... View More

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