IEEE - Institute of Electrical and Electronics Engineers, Inc. - New Insights on device level TDDB at GHz speed in advanced CMOS nodes

Author(s): M. Arabi ; X. Federspiel ; F. Cacho ; M. Rafik ; A.-P. Nguyen ; X. Garros ; G. Ghibaudo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-2574
ISSN (Paper): 1530-4388
DOI: 10.1109/TDMR.2019.2914362
Regular:

Time Dependent Dielectric Breakdown (TDDB) reliability of advanced CMOS node is becoming very challenging. With technology scaling and the hardening of operating conditions requirements, TDDB... View More

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