IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of Biaxially Tensile Strained Ge/SiGe Multiple Quantum Wells for Electro-Absorption Modulators With Low Polarization Sensitivities

Author(s): Jianfeng Gao ; Junqiang Sun ; Jialin Jiang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 10
Page(s): 1 - 10
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2018.2849711
Regular:

We analyze theoretically biaxially tensile strained Ge/Si0.18Ge0.82 multiple quantum wells (MQWs) for electro-absorption modulators with low polarization sensitivities. The difference between TE... View More

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