IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Author(s): Jing Yang ; Degang Zhao ; Zongshum Liu ; De-Sheng Jiang ; Jianjun Zhu ; Ping Chen ; Feng Liang ; S. T. Liu ; Wei Liu ; Yao Xing ; Mo Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 10
Page(s): 1 - 7
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2018.2859802
Regular:

GaN-based laser diodes (LDs) with different barrier layers are investigated by using simulation and experimental methods. it is found that the absorption loss always decreases with the increasing... View More

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