IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping

Author(s): Qianying Si ; Hangyang Chen ; Shuping Li ; Shiqiang Lu ; Junyong Kang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Volume: 9
Page(s): 1 - 7
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2017.2699322
Regular:

The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and... View More

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