IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhanced Electroluminescence Efficiency in Si-Nanostructure-Based Silicon-Nitride Light-Emitting Diodes via H2 Plasma Treatment

Author(s): Zhenxu Lin ; Yi Zhang ; Wenxing Zhang ; Jie Song ; Hongliang Li ; Chao Song ; Yanqing Guo ; Rui Huang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2018
Volume: 10
Page(s): 1 - 8
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2018.2818194
Regular:

The improved performance of Si quantum dot-based silicon nitride light-emitting devices with the inserted hole-blocking nc-Si layer was investigated. An enhanced electroluminescence (EL)... View More

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