IEEE - Institute of Electrical and Electronics Engineers, Inc. - (In x Ga1− x )2O3 Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

Author(s): Ke Zhang ; Jincheng Zhang ; Yue Hao ; Qian Feng ; Lu Huang ; Zhuangzhuang Hu ; Zhaoqing Feng ; Ang Li ; Hong Zhou ; Xiaoli Lu ; Chunfu Zhang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2018
Volume: 10
Page(s): 1 - 8
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2018.2841968
Regular:

The (InxGa1_x)2O3 photodetectors were fabricated on the single-crystalline (InxGa1_x)2O3 films deposited on... View More

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