IEEE - Institute of Electrical and Electronics Engineers, Inc. - Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Author(s): Nandha Kumar Subramani ; Julien Couvidat ; Ahmad Al Hajjar ; Jean-Christophe Nallatamby ; Raphael Sommet ; Raymond Quere
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 5
Page(s): 175 - 181
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2017.2672685
Regular:

In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are... View More

Advertisement