IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Author(s): Ya-Hsiang Tai ; Han-Wen Liu ; Po-Chun Chan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 7
Page(s): 33 - 37
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2875930
Regular:

In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with... View More

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