IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extraction of Contact Resistance and DC Modeling in Metal Oxide TFTs

Author(s): Na Li ; Wanling Deng ; Xixiong Wei ; Weijing Wu ; Junkai Huang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 7
Page(s): 127 - 133
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2885136
Regular:

Based on the device physics, a simple and fast method of extracting contact resistance in metal oxide thin-film transistors (MOTFTs) is proposed through the I-V characteristics. This method... View More

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