IEEE - Institute of Electrical and Electronics Engineers, Inc. - Silicon Photomultipliers With Area Up to 9 mm2 in a 0.35- $\mu$ m CMOS Process

Author(s): Xiao Liang ; Nicola D'ascenzo ; Werner Brockherde ; Stefan Dreiner ; Andrei Schmidt ; Qingguo Xie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 7
Page(s): 239 - 251
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2019.2893802
Regular:

Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in... View More

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