IEEE - Institute of Electrical and Electronics Engineers, Inc. - A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications

Author(s): Muhammad Waqar Hussain ; Hossein Elahipanah ; John E. Zumbro ; Saul Rodriguez ; Bengt Gunnar Malm ; Homer A. Mantooth ; Ana Rusu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 7
Page(s): 191 - 195
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2889638
Regular:

This brief presents a 59.5 MHz negative resistance oscillator for high-temperature operation. The oscillator employs an in-house 4H-silicon carbide BJT, integrated with the required circuit... View More

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