IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

Author(s): Changhyuck Sung ; Andrea Padovani ; Bastien Beltrando ; Donguk Lee ; Myunghoon Kwak ; Seokjae Lim ; Luca Larcher ; Vincenzo Della Marca ; Hyunsang Hwang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2019
Volume: 7
Page(s): 404 - 408
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2019.2902653
Regular:

We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaOX-based resistive switching memory (RRAM) devices for their possible... View More

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