IEEE - Institute of Electrical and Electronics Engineers, Inc. - Drift Field Implementation in Large Pinned Photodiodes for Improved Charge Transfer Speed

Author(s): Donald B. Hondongwa ; Eric R. Fossum
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 413 - 419
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2792311
Regular:

We present a methodology for generating built-in drift fields in large photodiodes. With the aid of TCAD we demonstrate how non-uniform doping profiles can be implemented in a standard CMOS... View More

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