IEEE - Institute of Electrical and Electronics Engineers, Inc. - Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States

Author(s): Hyeon-Jun Lee ; Katsumi Abe ; Sung Haeng Cho ; June-Seo Kim ; Seokhwan Bang ; Myoung-Jae Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 830 - 834
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2855731
Regular:

Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical... View More

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