IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

Author(s): Jianan Deng ; Jinhai Shao ; Bingrui Lu ; Yifang Chen ; Alexander Zaslavsky ; Sorin Cristoloveanu ; Maryline Bawedin ; Jing Wan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 557 - 564
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2017.2788403
Regular:

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike... View More

Advertisement